Figure 1 - 3D Systems SLA 3500 Stereolithography Machine (3D Systems
A lightfield consists of a collection of three-dimensional images, usually taken from different perspectives, that combine to form a single .
Introduction to 3D Lightyear - Mirek / Tamarind Technologies (2001). Retrieved March 26, 2011 .
PC system requirements for 3D Lightyear 1.5.2 and 3D Lightyear software version 1.5. Versions: 1.5, 1.4, 1.3,. 3D Lightyear 1.5.2 is a highly automated and fast.
.
Summary 3D Lightyear by BE Davis
See also
List of 3D modeling software
3D Printing
Category:3D graphics software
Category:3D computer graphics
Category:3D imaging
Category:CAD software for electronics
Category:Free 3D modeling software
Category:Free computer-aided design software
Category:Free software programmed in C++
Category:2002 softwareField
The present disclosure generally relates to the fabrication of semiconductor devices and, more specifically, to the fabrication of a memory device having a fin-type transistor and a method for fabricating the same.
Description of the Related Art
With an increasing demand for high-speed semiconductor devices, fin field effect transistors (FinFETs) have been developed to replace conventional planar FETs. A FinFET typically includes a semiconductor fin that is used to form a channel region and source/drain regions at the sides of the semiconductor fin. A gate structure may be formed over the channel region of the semiconductor fin and a gate spacer may be formed on the sidewalls of the gate structure. The gate spacer may have a spacer width that is defined by a number of fin pitches, which is inversely proportional to the fin height. Accordingly, in order to obtain a desired spacer width, the fin height must be increased.
However, with continued scaling of semiconductor devices, FinFETs having reduced fin height (and increased fin pitch) are desired. The provision of a fin height that is lower than the fin pitch causes a difficult etching process for patterning a gate spacer and an opening in a hard mask layer. Further, variations in fin height across a semiconductor substrate may increase the roughness of the top surface of the gate spacer, thereby affecting the gate sp be359ba680
Related links: